Memory Tag

NXP 4Mbit EEPROM
EEPROM stands for Electrically Easable Programmable Read-Only Memory. Compared to other non-volatile memories, like Flash and MRAM, EEPROMs require much lower erase and program currents, which make them ideal for all those applications where current consumption matters. Features And Benefits The NXH5104 from NXP is the first 4 Mbit (or 500 kByte) EEPROM in the market. It is offered in the compact WLCSP-13 package with a minimal footprint of 2.80 mm x 2.74 mm, and only 1 external capacitor is required in the most flexible power mode. Power-down current consumptionRead More

Posted On June 7, 2016By Christian JakobIn Technology

Memories – The Hidden Champions That Are Everywhere

Imagine a world without memories. A lot of people would likely say “So what?”. But believe us, nowadays we would be lost without them. As they are hidden and do their work in the background where they can’t be seen, nobody really takes notice of them. But they play an essential role in today’s technology. Whether we talk about computers, automotive, industrial or consumer applications, memories come into play. Reason enough to dedicate those hidden champions special attention. Together with our partners Toshiba, Samsung and Micron we at EBV ElektronikRead More
3D NAND Wafer Close-Up
Proud of the super-fast SSD in your new Laptop? Well, your storage will get a kick in the … soon. Why? Because Micron just announced the production of it’s TLC 3D NAND flash technology. The reason we are looking forward to this new storage technology is that it represents one of the major break-throughs in the area of memory technology. Over the last couple years storage innovation in the field of NAND was more or less limited to downsizing of the data cells on the memory die. In many casesRead More
Micron and Intel have developed an entirely new class of nonvolatile memory that can help turn immense amounts of data into valuable information in real time called 3D XPoint™. 3D Xpoint™ technology wafers are currently running in production lines at Intel Micron Flash Technologies fab (image: Intel) The huge leap forward is enabled by innovations like the cross point array structure. This means that perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.Read More