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Video From PCIM Reveals ON Semiconductor’s Power Discrete Strategy

ON Semiconductor’s Field Stop II (FSII) IGBTs have been introduced to the public during the PCIM in Nuremberg in May 2013. The high-performance IGBTs are targeted at high performance power conversion (HPPC) consumer appliance and industrial applications and are optimised for high-speed switching.

Now, two years later we had the chance to talk to Asif Jakwani, Sr. Director Power Discrete Division (SPG – Standard Products Group) at ON Semiconductor, about the company’s current power discrete and module strategy.

Jakwani shares his vision of offering complete solutions and modules as well as ON Semiconductor’s strategy to invest heavily in new technologies such as gallium nitride and isolated gate drivers.

As one can see in the background of the video on one of the screens shown at the PCIM 2015 this week the next generation of IGBTs FSIII is already included as coming soon… seems like we can expect some exciting new things from ON Semiconductor in the near future.

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